Storage as well as sensing devices of modern micro- nanoelectronics are based on integrated semiconductor technology. Most of the resulting devices have disadvantage such as being volatile or non flexible after production. In, e.g., data storage magnetic hard disk drives store data permanently, but are much slower than their RAM counterparts. Here, the Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising perspective to combine the benefits of fast access/writing speeds, non-volatility and field programmable logic gate arrays (FPGA). Within this context, we investigate spin-dependent transistor devices or read heads with a current perpendicular to the plane based on the magnetic tunnel junction.
Our research is also targeted towards new magnetocaloric effects in these nanostructured devices. A spin dependence of the thermoelectric effects has been recently discovered and the group is active in exploring the Spin Seebeck effect and the Magneto Seebeck effect
To get fast writing times in these magnetic devices, the magnetization dynamics are very important. We additionally study the dynamics of magnetic nanostructures and magnetic tunnel junctions in terms of spin wave excitation and X-ray circular dicroism in collaboration with research groups in Münster, Braunschweig, Kaiserslautern, Stuttgart and Berkeley. The so called spin torque switching is investigated as well to further lower the size and enhance the performance of integrated devices.
Finally, scanning microscope techniques are used to investigate new fields of research, such as molecular magnets on top of magnetic tunnel junctions.
The group is active in the Center for Spinelectronic Materials and Devices (CSMD) as well as in a number of collaborative research consortia (Priority programmes, Research Units, EU programmes).
For further information please send me an email (email@example.com).
For my research profile please go to my ResearcherID page or visit the research id: